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Group's 4th US Patent awarded :)

posted Jan 31, 2016, 6:24 PM by Khaled salama   [ updated May 25, 2016, 10:16 AM ]

Our work on "Fractal Structures For Fixed MEMS Capacitors" awarded a USA patent US 9,349,786. We demonstrate RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS, include suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. This work was published at IEEE/ASME Journal of Microelectromechanical Systems (JMEMS). This journal is widely accepted to be the most reputable and most prestigious journal in the field of MEMS. The paper is titled "RF MEMS Fractal Capacitors with High Self Resonant Frequencies" and coauthored by Dr. Elshurafa, Dr. Radwan, Dr. Emira, and Dr. Salama.

Congratulations!


Optical Profiler of Parallel Plate: An optical profiler image of the conventional parallel plate capacitor showing significant residual stress warping.




Optical Profiler of Fractal: An optical profiler image of the fifth-order Moore's fractal capacitor showing no residual stress warping.


SEM Caption: An SEM of one of the fabricated capacitors, showing a fifth-order Moore's fractal.

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