Our recent collaboration with Prof. Muhammad Mustafa Hussain and Prof. Jurgen Kosel on PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications have been featured as the main cover for the latest issue of the "Advanced Electronic Materials" journal. Physically bendable (flexible) solid state ferroelectric memory using PZT shows record endurance that is sustained for one billion operation cycles. Using a staged reactive ion etching process, silicon-substrate-based ferroelectric memory is etched from the back side to reduce the silicon thickness down to forty micrometers, achieving a bending radius of one centimeter.
Some related media coverage:
Nanotechnology Spotlights in nanowerk: “Flexible FeRAM fabricated with CMOS-compatible approach”, Read more: http://www.nanowerk.com/spotlight/spotid=40634.php
Technology update in nanotechweb: “Ferroelectric capacitor goes flexible”, Read more: