Our Article on Stochasticity modeling in memristors is the most frequently downloaded document for the month of February 1016. We developed a stochastic model of memristor devices where Innate stochasticity is modeled in a circuit compatible format and incorporated into models of threshold based memristors covering a wide set of designs. Experimental fitting to fabricated devices highlights the modeling accuracy and the generalized form of behavior. More detailed can be found at
Rawan Naous, Maruan Al-Shedivat, and Khaled Nabil Salama, Stochasticity Modeling in Memristors, IEEE Transactions on Nanotechnology (TNANO), vol. 15, no. 1, pp. 15-28, 2016 . DOI:10.1109/TNANO.2015.2493960
Congratulations Rawan and Maruan.