A team lead by KAUST in collaboration with Cairo University and University of Michigan developed a new memory readout technique. Taking advantage of memory locality and the sneak-paths correlation, we managed to achieve the theoretical limit of a single memory access per pixel for a gateless memristor array readout at a fraction of the power of state-of-the-art readout techniques. The presented adaptive-threshold readout is 7 to 24 times better than the other gate-less techniques presented in the literature, based on the density-power figure-of-merit. In addition, the new sneak-paths immune technique requires minimal hardware to distinguish between the memory data values. Details of the work can be found in our recently accepted paper "Single-Readout High-Density Memristor Crossbar"
Mohammed Zidan, Hesham Omran, Rawan Naous, Ahmed Sultan, Hossam Fahmy, Wei Lu, and Khaled Salama "Single-Readout High-Density Memristor Crossbar" Scientific Reports 6, 18863 (2016) doi:10.1038/srep18863