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Single readout technique published at scientific reports

posted Jan 7, 2016, 5:15 AM by Khaled salama   [ updated Jan 7, 2016, 11:17 AM ]
A team lead by KAUST in collaboration with  Cairo University and University of Michigan developed a new memory readout technique. Taking advantage of memory locality and the sneak-paths correlation, we managed to achieve the theoretical limit of a single memory access per pixel for a gateless memristor array readout at a fraction of the power of state-of-the-art readout techniques. The presented adaptive-threshold readout is 7 to 24 times better than the other gate-less techniques presented in the literature, based on the density-power figure-of-merit. In addition, the new sneak-paths immune technique requires minimal hardware to distinguish between the memory data values. Details of the work can be found in our recently accepted paper "Single-Readout High-Density Memristor Crossbar"

Mohammed Zidan, Hesham Omran, Rawan Naous, Ahmed Sultan, Hossam Fahmy, Wei Lu, and Khaled Salama "Single-Readout High-Density Memristor Crossbar"  Scientific Reports 6, 18863 (2016) doi:10.1038/srep18863

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