posted Oct 28, 2015, 8:15 AM by Khaled salama
updated Jan 7, 2016, 6:11 AM
We developed a stochastic model of memristor devices. Innate stochasticity is modeled in a circuit compatible format and incorporated into models of threshold based memristors covering a wide set of designs. Experimental fitting to fabricated devices highlights the modeling accuracy and the generalized form of behavior. More detailed can be found at our newly accepted paper Rawan Naous, Maruan Al-Shedivat, and Khaled Nabil Salama, Stochasticity Modeling in Memristors, IEEE Transactions on Nanotechnology (TNANO), vol. 15, no. 1, pp. 15-28, 2016 . DOI:10.1109/TNANO.2015.2493960
Congratulations Rawan and Maruan.