Doctoral student M. Zidan, gives a talk on his PhD work at the inaugural session of KAUST's EE seminar for Spring 2014.
Title: Memristor-based memories: challenges and opportunities
The memristor (memory resistor) is a promising candidate in replacing CMOS based memories and solid-state drives. The memristor is a nonlinear resistor that changes its resistance relative to the net charge passing through its two terminals, and saves its state after the electrical bias is removed. Memristor-based memories are retainable and fabricated in much higher density than conventional CMOS memories. In addition, they do not need the energy-consuming refresh cycles required by the current CMOS memories. However, there are numerous challenges that need to be addressed before the memristor genuinely replaces current memory technologies, which is the motivation behind this research effort.
Mohammed Zidan is currently working toward the Ph.D. degree in the Electrical Engineering Program, King Abdullah University of Science and Technology (KAUST). He earned his M.Sc. in Electronics and Communications Engineering from Faculty of Engineering, Cairo University, Egypt in 2010, where he was ranked first. In 2006, he received his B.Sc. in Electronics and Communications Engineering, Institute of Aviation Engineering and Technology (IAET), Egypt, also ranking first. Before joining KAUST, he worked as a teaching assistant at the German University in Cairo (GUC), Egypt and at the IAET. His research interests are memristor, memory, chaotic systems, ray-tracing, and computer arithmetic. Mohammed has 16 publications and few pending patents. He is currently serving as a member of the working groups formulating the future IEEE Standards P1788 and P1680.4.