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Mohammed Affan Zidan

Mohammed Affan Zidan
Ibn Sina Building (Bldg. 3), 3255-WS14
King Abdullah University of Science and Technology
Thuwal, 23955-6900
Kingdom of Saudi Arabia
Email:  
mohammed.zidan@kaust.edu.sa

Research interests:
memristor, memory, chaotic systems, ray-tracing, and computer arithmetic

Education background:
  • M.Sc., 2010, Cairo University, Faculty of Engineering, Egypt (Ranked First) 
  • B.Sc., 2006, Institute of Aviation Engineering and Technology, Egypt (Ranked First)
Selected publications:
  1. M. Affan Zidan, H. Omran, A. Sultan, H. A. H. Fahmy, and K. N. Salama, “Compensated Readout for High Density MOS-Gated Memristor Crossbar Array,” IEEE Transaction on Nanotechnology (TNANO), vol. 14, no. 1, pp. 3-6, January 2015

  2. M. Affan Zidan, A. Eltawil, F. Kurdahi, H. A. H. Fahmy, and K. N. Salama, “Memristor Multi-Port Readout: 
  3. A Closed-Form Solution for Sneak-Paths,” IEEE Transaction on Nanotechnology (TNANO), vol. 13, no. 2, pp. 
  4. 274-282, March, 2014

  5. M. Affan Zidan, H. A. H. Fahmy, MM Hussain, and K. N. Salama, “Memristor Based Memory: The Sneak Paths Problem and Solutions,” Microelectronics Journal, vol. 44, no. 2, pp. 176-183, February 2013 (Top 25 Microelectronics Journal Hottest Articles, 2013)

  6. M. Affan Zidan, Hesham Omran, A. G. Radwan, and K. N. Salama, Memristor-Based Reactance-Less Oscillator,” Electronics Letters, vol. 47, no. 22, pp. 1220–1221, October 2011. (Selected among five papers to be included in the journal's “In Brief” section)

  7. M. Affan Zidan, A. G. Radwan, and K. N. Salama, “Random Number Generation Based onDigital Differential Chaos,” IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), Seoul, South Korea, August 2011
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