We developed a stochastic model of memristor devices. Innate stochasticity is modeled in a circuit compatible format and incorporated into models of threshold based memristors covering a wide set of designs. Experimental fitting to fabricated devices highlights the modeling accuracy and the generalized form of behavior.
Feel free to use/modify these codes as you see fit. Any publications (codes, papers, technical reports,..) in which our codes (in their original or a modified format) have been used should cite the following references.
 Rawan Naous, Maruan Al-Shedivat, and Khaled Nabil Salama, Stochasticity Modeling in Memristors, IEEE Transactions on Nanotechnology (TNANO), vol. 15, no. 1, pp. 15-28, 2016 . DOI:10.1109/TNANO.2015.2493960
 Maruan Al-Shedivat, Rawan Naous,Gert Cauwenberghs, and Khaled Nabil Salama, Memristors Empower Spiking Neurons with Stochasticity, IEEE Journal of Emerging technologies in circuits and systems, VOL. 5, NO. 2, 242-253, JUNE 2015
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Last Update: 9-Nov-2015; run using run using spectre version 188.8.131.529.isr cadence version 2012.09