Rectifiers

All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage

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Wang Zhenwei, et al., "All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage." Advanced Electronic Materials 5 (12), 2019, 1900531. All-oxide, fully-transparent thin film transistors and rectifiers, processed entirely by atomic layer deposition, have been developed for on-chip capacitive energy storage. Fully depleted thin film transistor (TFT) operation is achieved by optimizing the carrier concentration in the ZnO channels. The TFTs show an average saturation mobility of 10.5 cm2 V−1 s−1, a stable positive turn-on voltage of 0.88 V, a low subthreshold

Mahmoud Ouda

Postdoctoral Research Fellow, Sensors
Mahmoud Ouda is currently a Postdoctoral Research Associate with the Communications and Signal Processing Group (CSP), Department of Electrical and Electronic Engineering at Imperial College London. He received his Ph.D. from King Abdullah University of Science & Technology (KAUST), Saudi Arabia in 2016, and his M.Sc. and B.Sc. (with honors) both in Electronics and Communications Engineering from Ain Shams University, Cairo, Egypt, in 2011 and 2006 respectively. He was a Graduate Research Assistant with the Sensors Lab. in King Abdullah University of Science & Technology (KAUST) from 2010 to